PART |
Description |
Maker |
CCR1 CCR CCR1Z-1K2KI CCR1Z-1K8KI CCR1Z-1K5KI CCR1Z |
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 390 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 270 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 560 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 2200 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 680 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 820 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 10000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 2700 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 3300 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 220 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 330 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 470 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 22000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 12000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 18000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 15000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1000 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1500 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1800 ohm, SURFACE MOUNT RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1200 ohm, SURFACE MOUNT Carbon Ceramic Resistors
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Welwyn Components, Ltd. Welwyn Components Limited TT Electronics / Welwyn
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2SK1942-01 |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
2SK2006-4072 |
5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
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IRFBF20PBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
9N90L-T47-T 9N90G-T47-T 9N90G-T3P-T 9N90L-T3P-T 9N |
900V N-CHANNEL MOSFET 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
|
FQPF2N90 |
900V N-Channel MOSFET 1.4 A, 900 V, 7.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
2SK2664 |
3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Power MOSFETs / HVX-II Series (Three Terminal Type)
|
Shindengen
|
IXFM13N90 IXFH10N90 IXYSCORP-IXFT13N90 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强HiPerFET功率MOSFET) 10 A, 900 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs
|
IXYS, Corp. ETC IXYS Corporation
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
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Microsemi Corporation Microsemi, Corp.
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